Invention Grant
- Patent Title: Hybrid R-2R structure for low glitch noise segmented DAC
- Patent Title (中): 用于低毛刺噪声分段DAC的混合R-2R结构
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Application No.: US14493254Application Date: 2014-09-22
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Publication No.: US09178524B1Publication Date: 2015-11-03
- Inventor: Sang Min Lee , Dongwon Seo
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox LLP
- Main IPC: H03M1/66
- IPC: H03M1/66 ; H03M1/08 ; H03M1/68 ; H03M1/78

Abstract:
The apparatus may be an N-bit DAC including (2M−1) parallel stages associated with M most significant bits, and (N-M) stages associated with (N-M) least significant bits. The (2M−1) parallel stages may deliver a first current to current-summing nodes of the DAC. The (N-M) stages may include a resistive network and a second pair of switches, and may deliver a second current to the resistive network of the stage. Each resistive network may scale the respectively delivered currents according to a binary weight of a stage corresponding to the resistive network, and may deliver the scaled currents to the pair of current-summing nodes. At least one of the (N-M) stages may be separated from the remaining stages.
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