Invention Grant
- Patent Title: Non-volatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13585449Application Date: 2012-08-14
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Publication No.: US09183909B2Publication Date: 2015-11-10
- Inventor: Jong-pil Son
- Applicant: Jong-pil Son
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2011-0083578 20110822
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C7/24
Abstract:
A non-volatile semiconductor memory device includes: a power supply unit; a memory cell array powered on or off by the power supply unit; and a read unit for reading data recorded on the memory cell array, wherein the data recorded on the memory cell array is not read in response to a control signal, when the memory cell array is powered on or off.
Public/Granted literature
- US20130051132A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-02-28
Information query
