Invention Grant
US09183946B2 Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device
有权
在非易失性存储器件中存储数据的方法和非易失性存储器件的测试方法
- Patent Title: Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device
- Patent Title (中): 在非易失性存储器件中存储数据的方法和非易失性存储器件的测试方法
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Application No.: US14153140Application Date: 2014-01-13
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Publication No.: US09183946B2Publication Date: 2015-11-10
- Inventor: Eun-Kyoung Kim , Myoung-Won Yoon , Jong-Chul Lee , Oh-Suk Kwong , Won-Chul Lee
- Applicant: Eun-Kyoung Kim , Myoung-Won Yoon , Jong-Chul Lee , Oh-Suk Kwong , Won-Chul Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0003782 20130114
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/34 ; G11C29/08 ; G11C29/50
Abstract:
A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.
Public/Granted literature
- US20140198581A1 METHOD OF STORING DATA IN NONVOLATILE MEMORY DEVICE AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE Public/Granted day:2014-07-17
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