Invention Grant
- Patent Title: Detecting write disturb in multi-port memories
- Patent Title (中): 检测多端口存储器中的写入干扰
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Application No.: US14254227Application Date: 2014-04-16
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Publication No.: US09183947B1Publication Date: 2015-11-10
- Inventor: Atul Katoch
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/02 ; G11C7/22

Abstract:
A circuit comprises a memory cell, a first circuit, and a second circuit. The memory cell has a first control line and a second control line. The first control line carries a first control signal. The second control line carries a second control signal. The first circuit is coupled with the first control line, the second control line, and a node. The second circuit is coupled to the node and is configured to receive a first clock signal and a second clock signal. The first circuit and the second circuit, based on the first control signal, the second control signal, the first clock signal and the second clock signal, are configured to generate a node signal on the node. A logical value of the node signal indicates a write disturb condition of the memory cell.
Public/Granted literature
- US20150302938A1 DETECTING WRITE DISTURB IN MULTI-PORT MEMORIES Public/Granted day:2015-10-22
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