Invention Grant
US09184086B2 Methods of fabricating semiconductor device having shallow trench isolation (STI)
有权
制造具有浅沟槽隔离（STI）的半导体器件的方法
- Patent Title: Methods of fabricating semiconductor device having shallow trench isolation (STI)
- Patent Title (中): 制造具有浅沟槽隔离（STI）的半导体器件的方法
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Application No.: US14138552Application Date: 2013-12-23
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Publication No.: US09184086B2Publication Date: 2015-11-10
- Inventor: Tai-Su Park , Mi-Young Seo , Sung-Wook Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0014456 20130208
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762
Abstract:
Methods of fabricating a semiconductor device include forming a field trench in a silicon substrate, forming a first oxide layer in the field trench, forming a first thinned oxide layer by partially removing a surface of the first oxide layer, and forming a first nitride layer on the first thinned oxide layer.
Public/Granted literature
- US20140227856A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION (STI) Public/Granted day:2014-08-14
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