Invention Grant
- Patent Title: Graphene wiring and semiconductor device
- Patent Title (中): 石墨烯布线和半导体器件
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Application No.: US14658442Application Date: 2015-03-16
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Publication No.: US09184133B2Publication Date: 2015-11-10
- Inventor: Masayuki Katagiri , Tadashi Sakai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-058842 20140320
- Main IPC: H01L23/532
- IPC: H01L23/532

Abstract:
A graphene wiring of an embodiment includes graphene, first conductive layers, second conductive layers, and a third conductive layer. The first conductive layers are connected to first sides of the graphene opposite to each other in a longitudinal direction of the wiring. The second conductive layers are connected to second sides of the graphene opposite to each other in a widthwise direction of the wiring. The third conductive layer is connected to a top surface of the graphene. The first and second conductive layers are connected to each other.
Public/Granted literature
- US20150270226A1 GRAPHENE WIRING AND SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
Information query
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