Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US14077536Application Date: 2013-11-12
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Publication No.: US09184142B2Publication Date: 2015-11-10
- Inventor: Atsushi Fujisawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2011-095457 20110421
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40 ; H01L23/00 ; H01L21/56 ; H01L23/495 ; B29C45/14 ; B29C45/00 ; H01L23/02 ; H01L23/31 ; B29C45/34

Abstract:
To provide a semiconductor device having suspension leads with less distortion. In QFN having a plurality of external terminal portions at the periphery of the bottom surface of a sealing body, a plurality of leads is linked to a plurality of long suspension leads of the QFN at an intermediate portion thereof or at between the intermediate portion and a position near the die pad. These long suspension leads are each supported by these leads, making it possible to suppress distortion of each of the suspension leads in a wire bonding step or molding step in the fabrication of the QFN.
Public/Granted literature
- US20140061953A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2014-03-06
Information query
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