Invention Grant
- Patent Title: Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
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Application No.: US14597315Application Date: 2015-01-15
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Publication No.: US09184158B2Publication Date: 2015-11-10
- Inventor: Kenji Kouno
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-229959 20070905; JP2007-268328 20071015; JP2008-096017 20080402; JP2008-096018 20080402
- Main IPC: H03K17/60
- IPC: H03K17/60 ; H01L27/02 ; H03K17/082

Abstract:
A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.
Public/Granted literature
- US20150123718A1 SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS Public/Granted day:2015-05-07
Information query
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