A power semiconductor device comprises a substrate, a first electrode, a conductive layer, at least one electrical connecting element, a plurality of doped semiconductor layers, an insulating layer, and a second electrode. The first electrode is formed on a surface of the substrate. The conductive layer is formed on another surface of the substrate. The electrical connecting element is formed through the substrate and electrically connects the first electrode and the conductive layer. The doped semiconductor layers are stacked on the conductive layer. The upper most semiconductor layer comprises two doped sub-regions. The insulating layer is formed on the plurality of doped semiconductor layers. The second electrode is formed on the insulating layer and at least extends on an area between the doped sub-regions.