Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14347443Application Date: 2011-09-28
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Publication No.: US09184338B2Publication Date: 2015-11-10
- Inventor: Meoung Whan Cho , Seog Woo Lee , Ryuichi Toba , Yoshitaka Kadowaki
- Applicant: Meoung Whan Cho , Seog Woo Lee , Ryuichi Toba , Yoshitaka Kadowaki
- Applicant Address: CN Hong Kong JP Tokyo
- Assignee: BBSA LIMITED,DOW ELECTRONICS MATERIALS CO., LTD.
- Current Assignee: BBSA LIMITED,DOW ELECTRONICS MATERIALS CO., LTD.
- Current Assignee Address: CN Hong Kong JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2011/005485 WO 20110928
- International Announcement: WO2013/046267 WO 20130404
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L21/02 ; H01L21/78 ; H01L29/06 ; H01L33/20
Abstract:
The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.
Public/Granted literature
- US20140284770A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-09-25
Information query
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