Invention Grant
- Patent Title: Flexible and on wafer hybrid plasma-semiconductor transistors
- Patent Title (中): 柔性和晶圆混合等离子体半导体晶体管
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Application No.: US14330254Application Date: 2014-07-14
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Publication No.: US09184341B2Publication Date: 2015-11-10
- Inventor: J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
- Applicant: The Board of Trustees of the University of Illinois
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Greer, burns & Crain, Ltd.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L33/02 ; H01L29/73 ; H01L29/08 ; H01J17/49 ; H01J17/06

Abstract:
Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
Public/Granted literature
- US20140319654A1 FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS Public/Granted day:2014-10-30
Information query
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