Invention Grant
- Patent Title: Light-emitting diode
- Patent Title (中): 发光二极管
-
Application No.: US14470947Application Date: 2014-08-28
-
Publication No.: US09184342B1Publication Date: 2015-11-10
- Inventor: Pei-Yu Chang
- Applicant: MIKRO MESA TECHNOLOGY CO., LTD.
- Applicant Address: WS Apia
- Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee Address: WS Apia
- Agency: CKC & Partners Co., Ltd.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00 ; H01L33/02 ; H01L33/32

Abstract:
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a dielectric layer and an electrode. The active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has at least one threading dislocation therein. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer has at least one first opening therein to expose a part of the second type semiconductor layer. The vertical projection of the threading dislocation on the dielectric layer is separated from the first opening. The electrode partially disposed on the dielectric layer and electrically coupled with the exposed part of the second type semiconductor layer through the opening.
Information query
IPC分类: