Invention Grant
- Patent Title: Optical semiconductor device and method for fabricating the optical semiconductor device
- Patent Title (中): 光半导体装置及其制造方法
-
Application No.: US14331158Application Date: 2014-07-14
-
Publication No.: US09184558B2Publication Date: 2015-11-10
- Inventor: Takeshi Matsumoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2010-064764 20100319
- Main IPC: G02B6/34
- IPC: G02B6/34 ; H01L33/00 ; H01S5/026 ; B82Y20/00 ; G02B6/12 ; G02B6/124 ; H01L21/02 ; H01S5/22 ; H01S5/12 ; H01S5/32 ; H01S5/34

Abstract:
An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.
Public/Granted literature
- US20140321493A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2014-10-30
Information query