Invention Grant
US09187317B2 MEMS integrated pressure sensor and microphone devices and methods of forming same
有权
MEMS集成压力传感器和麦克风装置及其形成方法
- Patent Title: MEMS integrated pressure sensor and microphone devices and methods of forming same
- Patent Title (中): MEMS集成压力传感器和麦克风装置及其形成方法
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Application No.: US13944382Application Date: 2013-07-17
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Publication No.: US09187317B2Publication Date: 2015-11-17
- Inventor: Chun-Wen Cheng , Chia-Hua Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: B81C1/00
- IPC: B81C1/00

Abstract:
A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed.
Public/Granted literature
- US20140264662A1 MEMS Integrated Pressure Sensor and Microphone Devices and Methods of Forming Same Public/Granted day:2014-09-18
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