Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US14340518Application Date: 2014-07-24
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Publication No.: US09190117B2Publication Date: 2015-11-17
- Inventor: Takanori Ueda , Kazuyuki Kouno
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-043219 20120229
- Main IPC: G11C7/14
- IPC: G11C7/14 ; G11C5/06 ; G11C13/00 ; G11C7/12 ; G11C8/14 ; G11C16/28

Abstract:
A nonvolatile semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged in a matrix; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between these lines; a reference word line connected to the gate of the first transistor; and a reference driver circuit configured to control the gate voltage of the second transistor.
Public/Granted literature
- US20140334217A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-11-13
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