Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US14155960Application Date: 2014-01-15
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Publication No.: US09190155B2Publication Date: 2015-11-17
- Inventor: Joon-Ho Lee , Jong-Nam Baek , Dong-Hoon Ham , Sang-Wook Yoo , In-Tae Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0006567 20130121
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/16 ; G11C16/04

Abstract:
A memory system includes a flash memory including a block having first sub-blocks and second sub-blocks different from each other, the second sub-blocks including free pages only; and a controller configured to erase the flash memory in units of the sub-blocks, and in a garbage collection operation, the controller is configured to copy data of a valid page of the first sub-blocks to at least one of the second sub-blocks.
Public/Granted literature
- US20140204672A1 MEMORY SYSTEM Public/Granted day:2014-07-24
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