Invention Grant
- Patent Title: Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device
- Patent Title (中): 半导体装置的制造方法以及半导体装置的制造装置
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Application No.: US14024676Application Date: 2013-09-12
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Publication No.: US09190262B2Publication Date: 2015-11-17
- Inventor: Takeshi Hizawa , Nobuhide Yamada , Yoshihiro Ogawa , Masahiro Kiyotoshi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-231502 20101014
- Main IPC: B08B3/04
- IPC: B08B3/04 ; H01L21/02 ; H01L21/28 ; H01L27/115
Abstract:
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.
Public/Granted literature
- US20140014142A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-01-16
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