Invention Grant
- Patent Title: Composition for advanced node front-and-back-end of line chemical mechanical polishing
- Patent Title (中): 线性化学机械抛光高级节点前端和后端组成
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Application No.: US14598675Application Date: 2015-01-16
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Publication No.: US09190286B2Publication Date: 2015-11-17
- Inventor: Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
- Applicant: Fujifilm Planar Solutions, LLC
- Applicant Address: US MI Adrian
- Assignee: Fujifilm Planar Solutions, LLC
- Current Assignee: Fujifilm Planar Solutions, LLC
- Current Assignee Address: US MI Adrian
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/306 ; C09G1/02 ; C09K3/14 ; H01L21/3105 ; H01L21/321 ; H01L21/768 ; H01L29/66 ; H01L21/04
Abstract:
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
Public/Granted literature
- US20150132957A1 COMPOSITION FOR ADVANCED NODE FRONT-AND-BACK-END OF LINE CHEMICAL MECHANICAL POLISHING Public/Granted day:2015-05-14
Information query
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