Invention Grant
- Patent Title: Semiconductor apparatus and substrate
- Patent Title (中): 半导体装置及基板
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Application No.: US14475101Application Date: 2014-09-02
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Publication No.: US09190363B2Publication Date: 2015-11-17
- Inventor: Masahiro Ishida
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-174890 20110810
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/00

Abstract:
A semiconductor apparatus includes a semiconductor substrate having a main surface, a multilayer structure circuit formed over the main surface of the semiconductor substrate, a protective wall formed in the same layer as an uppermost layer of the multilayer structure circuit so as to surround the multilayer structure circuit in plan view, and an alignment mark formed in the same layer as the uppermost layer. The alignment mark is formed so as to contact at least part of the protective wall.
Public/Granted literature
- US20140367836A1 SEMICONDUCTOR APPARATUS AND SUBSTRATE Public/Granted day:2014-12-18
Information query
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