Invention Grant
US09190365B2 Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
有权
用于保护半导体结的玻璃组合物，半导体器件和半导体器件的制造方法
- Patent Title: Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
- Patent Title (中): 用于保护半导体结的玻璃组合物，半导体器件和半导体器件的制造方法
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Application No.: US14370782Application Date: 2013-04-26
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Publication No.: US09190365B2Publication Date: 2015-11-17
- Inventor: Koji Ito , Atsushi Ogasawara , Koya Muyari
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: WOPCT/JP2012/061778 20120508
- International Application: PCT/JP2013/062513 WO 20130426
- International Announcement: WO2013/168623 WO 20131114
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L29/00 ; H01L23/29 ; H01L23/31 ; H01L29/66 ; H01L29/861 ; H01L21/02 ; H01L21/762 ; C03C3/091 ; C03C3/093 ; C03C8/02 ; H01L21/316
Abstract:
A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.
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Information query
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