Invention Grant
US09190409B2 Replacement metal gate transistor with controlled threshold voltage
有权
具有受控阈值电压的替代金属栅极晶体管
- Patent Title: Replacement metal gate transistor with controlled threshold voltage
- Patent Title (中): 具有受控阈值电压的替代金属栅极晶体管
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Application No.: US14187745Application Date: 2014-02-24
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Publication No.: US09190409B2Publication Date: 2015-11-17
- Inventor: Kenzo Manabe , Hemanth Jagannathan
- Applicant: Renesas Electronics Corporation , International Business Machines Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa US NY Armonk
- Assignee: Renesas Electronics Corporation,International Business Machines Corporation
- Current Assignee: Renesas Electronics Corporation,International Business Machines Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L27/11
Abstract:
A method and structure for a semiconductor device includes a semiconductor substrate and an N-channel transistor and a P-channel transistor provided on the semiconductor substrate. Each of the N-channel transistor and the P-channel transistor has a gate dielectric film on the semiconductor substrate, and a gate electrode is formed on the gate dielectric. The gate electrode comprises a metal conductive layer. The oxygen concentration in the metal conductive layer for the N-channel transistor is different from that for the P-channel transistor.
Public/Granted literature
- US20140239407A1 REPLACEMENT METAL GATE TRANSISTOR WITH CONTROLLED THRESHOLD VOLTAGE Public/Granted day:2014-08-28
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