Invention Grant
- Patent Title: Thin film transistor substrate and manufacturing method thereof
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US14255167Application Date: 2014-04-17
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Publication No.: US09190420B2Publication Date: 2015-11-17
- Inventor: Kensuke Nagayama , Kazunori Inoue , Yasuyoshi Ito , Nobuaki Ishiga , Naoki Tsumura , Shinichi Yano
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-093330 20130426
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/12

Abstract:
A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
Public/Granted literature
- US20140319515A1 THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-30
Information query
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