Invention Grant
US09190432B2 Oxide thin-film transistor array substrate, manufacturing method thereof and display panel
有权
氧化物薄膜晶体管阵列基板，其制造方法和显示面板
- Patent Title: Oxide thin-film transistor array substrate, manufacturing method thereof and display panel
- Patent Title (中): 氧化物薄膜晶体管阵列基板，其制造方法和显示面板
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Application No.: US14355330Application Date: 2013-04-24
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Publication No.: US09190432B2Publication Date: 2015-11-17
- Inventor: Shuang Sun
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201310063256 20130228
- International Application: PCT/CN2013/074633 WO 20130424
- International Announcement: WO2014/131236 WO 20140904
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
An oxide thin-film transistor (TFT) array substrate, a manufacturing method thereof and a display panel are provided. In the manufacturing method, a pattern of a gate insulating layer (13), an oxide active layer (14) and an etch barrier layer (15) is formed on a substrate (10) on which a pattern of a gate line (11) and a gate electrode (12) is formed, by one patterning process.
Public/Granted literature
- US20150102339A1 OXIDE THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL Public/Granted day:2015-04-16
Information query
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