Invention Grant
- Patent Title: FinFET device
- Patent Title (中): FinFET器件
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Application No.: US14190611Application Date: 2014-02-26
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Publication No.: US09190465B2Publication Date: 2015-11-17
- Inventor: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/12 ; H01L29/04 ; H01L21/8234 ; H01L27/088 ; H01L21/84
Abstract:
A method for fabricating a field effect transistor device includes removing a portion of a first semiconductor layer and a first insulator layer to expose a portion of a second semiconductor layer, wherein the second semiconductor layer is disposed on a second insulator layer, the first insulator layer is disposed on the second semiconductor layer, and the first semiconductor layer is disposed on the first insulator layer, removing portions of the first semiconductor layer to form a first fin disposed on the first insulator layer and removing portions of the second semiconductor layer to form a second fin disposed on the second insulator layer, and forming a first gate stack over a portion of the first fin and forming a second gate stack over a portion of the second fin.
Public/Granted literature
- US20140175549A1 FINFET DEVICE Public/Granted day:2014-06-26
Information query
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