Invention Grant
- Patent Title: Semiconductor device and semiconductor device manufacturing method
- Patent Title (中): 半导体器件和半导体器件制造方法
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Application No.: US14025978Application Date: 2013-09-13
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Publication No.: US09190475B2Publication Date: 2015-11-17
- Inventor: Hiroshi Sunamura , Kishou Kaneko , Naoya Furutake , Shinobu Saitou , Yoshihiro Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2012-203558 20120914; JP2013-082747 20130411
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L29/24 ; H01L21/8254
Abstract:
A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view.
Public/Granted literature
- US20140077206A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2014-03-20
Information query
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