According to one embodiment, a nonvolatile semiconductor memory device includes a memory element region and a capacitance element region. The capacitance region including: a second stacked body, each of a plurality of second electrode layers and each of a plurality of second insulating layers being stacked alternately; a plurality of conductive layers; and a second insulating film provided between each of the plurality of conductive layers and each of the plurality of second electrode layers. In the capacitance element region, a first capacitor is made of one of the plurality of second insulating layers and a pair of the second electrode layers sandwiching the one of the plurality of second insulating layers, and a second capacitor is made of the second insulating film, and one of the plurality of second electrode layers and one of the plurality of conductive layers sandwiching the second insulating film.