Invention Grant
- Patent Title: Strained finFET with an electrically isolated channel
- Patent Title (中): 具有电隔离通道的应变finFET
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Application No.: US14481146Application Date: 2014-09-09
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Publication No.: US09190520B2Publication Date: 2015-11-17
- Inventor: Henry K. Utomo , Kangguo Cheng , Ramachandra Divakaruni , Dechao Guo , Myung-Hee Na , Ravikumar Ramachandran , Kern Rim , Huiling Shang
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L21/8234 ; H01L29/08 ; H01L29/10 ; H01L29/66
Abstract:
A fin structure includes an optional doped well, a disposable single crystalline semiconductor material portion, and a top semiconductor portion formed on a substrate. A disposable gate structure straddling the fin structure is formed, and end portions of the fin structure are removed to form end cavities. Doped semiconductor material portions are formed on sides of a stack of the disposable single crystalline semiconductor material portion and a channel region including the top semiconductor portion. The disposable single crystalline semiconductor material portion may be replaced with a dielectric material portion after removal of the disposable gate structure or after formation of the stack. The gate cavity is filled with a gate dielectric and a gate electrode. The channel region is stressed by the doped semiconductor material portions, and is electrically isolated from the substrate by the dielectric material portion.
Public/Granted literature
- US20140377924A1 STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL Public/Granted day:2014-12-25
Information query
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