Invention Grant
US09190549B2 Solar cell made using a barrier layer between p-type and intrinsic layers
有权
在p型和本征层之间使用阻挡层制成的太阳能电池
- Patent Title: Solar cell made using a barrier layer between p-type and intrinsic layers
- Patent Title (中): 在p型和本征层之间使用阻挡层制成的太阳能电池
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Application No.: US13406815Application Date: 2012-02-28
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Publication No.: US09190549B2Publication Date: 2015-11-17
- Inventor: Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
- Applicant: Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
- Applicant Address: US NY Armonk TW Tainan
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD
- Current Assignee Address: US NY Armonk TW Tainan
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/07
- IPC: H01L31/07 ; H01L31/18 ; H01L31/075 ; H01L31/20
Abstract:
A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
Public/Granted literature
- US20130221373A1 SOLAR CELL MADE USING A BARRIER LAYER BETWEEN P-TYPE AND INTRINSIC LAYERS Public/Granted day:2013-08-29
Information query
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