Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US14465354Application Date: 2014-08-21
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Publication No.: US09190574B2Publication Date: 2015-11-17
- Inventor: Shinya Hakuta
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2012-035076 20120221
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/60 ; H01L33/10 ; H01L33/30

Abstract:
A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength λ includes: at least a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer. At least one phase changing layer having a thickness of mλ/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer.
Public/Granted literature
- US20140361330A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2014-12-11
Information query
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