Invention Grant
US09190608B2 Method for fabricating semiconductor device having magnetic tunnel junction layer patterned using etching gas containing oxygen
有权
一种制造具有使用含氧蚀刻气体图案化的磁性隧道结层的半导体器件的方法
- Patent Title: Method for fabricating semiconductor device having magnetic tunnel junction layer patterned using etching gas containing oxygen
- Patent Title (中): 一种制造具有使用含氧蚀刻气体图案化的磁性隧道结层的半导体器件的方法
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Application No.: US14581554Application Date: 2014-12-23
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Publication No.: US09190608B2Publication Date: 2015-11-17
- Inventor: Min Suk Lee , Bo Kyoung Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0078971 20110809
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/08 ; H01L43/10
Abstract:
In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.
Public/Granted literature
- US20150111309A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2015-04-23
Information query
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