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US09190610B2 Methods of forming phase change memory with various grain sizes 有权
用各种晶粒尺寸形成相变记忆的方法

Methods of forming phase change memory with various grain sizes
Abstract:
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.
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