Invention Grant
- Patent Title: Methods of forming phase change memory with various grain sizes
- Patent Title (中): 用各种晶粒尺寸形成相变记忆的方法
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Application No.: US14145646Application Date: 2013-12-31
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Publication No.: US09190610B2Publication Date: 2015-11-17
- Inventor: Chun-Sheng Liang , Tzyh-Cheang Lee , Fu-Liang Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/44 ; H01L21/479

Abstract:
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.
Public/Granted literature
- US20140110656A1 Phase Change Memory with Various Grain Sizes Public/Granted day:2014-04-24
Information query
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