Invention Grant
- Patent Title: RF power transistor circuits
- Patent Title (中): RF功率晶体管电路
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Application No.: US14185382Application Date: 2014-02-20
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Publication No.: US09190965B2Publication Date: 2015-11-17
- Inventor: Hussain H. Ladhani , Gerard J. Bouisse , Jeffrey K. Jones
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/32 ; H03F1/02 ; H03F1/56 ; H03F3/193 ; H03F3/26 ; H03F3/21

Abstract:
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Public/Granted literature
- US20140167863A1 RF POWER TRANSISTOR CIRCUITS Public/Granted day:2014-06-19
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