Invention Grant
- Patent Title: Buffered direct injection pixel for infrared detector arrays
- Patent Title (中): 用于红外探测器阵列的缓冲直射像素
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Application No.: US13936533Application Date: 2013-07-08
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Publication No.: US09191586B2Publication Date: 2015-11-17
- Inventor: Lin Minlong
- Applicant: Sensors Unlimited, Inc.
- Applicant Address: US NJ Princeton
- Assignee: Sensors Unlimited, Inc.
- Current Assignee: Sensors Unlimited, Inc.
- Current Assignee Address: US NJ Princeton
- Agency: Locke Lord LLP
- Agent Scott D. Wofsy; Joshua L. Jones
- Main IPC: H04N5/33
- IPC: H04N5/33 ; H04N5/374 ; H04N5/357 ; H04N5/3745 ; H01L27/146
Abstract:
A buffered direct injection pixel is disclosed that includes a photodiode for receiving an input signal, a direct injection transistor associated with the photodiode, and a Sackinger current mirror coupled with the direct injection transistor, providing reduced size, low noise and low power, as compared to prior art buffered direct injection pixels.
Public/Granted literature
- US20150009337A1 BUFFERED DIRECT INJECTION PIXEL FOR INFRARED DETECTOR ARRAYS Public/Granted day:2015-01-08
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