Invention Grant
- Patent Title: Method for providing a magnetoresistive element having small critical dimensions
- Patent Title (中): 提供具有小临界尺寸的磁阻元件的方法
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Application No.: US11635830Application Date: 2006-12-07
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Publication No.: US09196270B1Publication Date: 2015-11-24
- Inventor: Danning Yang , Guanghong Luo , Yun-Fei Li
- Applicant: Danning Yang , Guanghong Luo , Yun-Fei Li
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/31
- IPC: G11B5/31 ; G11B5/39 ; H01L21/311 ; H01L21/314

Abstract:
The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.
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