Invention Grant
- Patent Title: Flash memory device and a method of verifying the same
- Patent Title (中): 闪存设备及其验证方法
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Application No.: US14082304Application Date: 2013-11-18
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Publication No.: US09196372B2Publication Date: 2015-11-24
- Inventor: Seungwon Lee , Byeonghoon Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0010065 20100203
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26

Abstract:
Provided are a flash memory device and a method of verifying the same. The flash memory device includes: a memory cell for storing data; a sense amplifier for reading information of the memory cell; a load current input device for providing a load current to the sense amplifier; and a control circuit for controlling the load current input device to provide a load current during a memory cell reading operation, verifying the memory cell by using a program verify voltage if the memory cell is a programmed memory cell, and verifying the memory cell by using a compensated erase verify voltage if the memory cell is an erased memory cell.
Public/Granted literature
- US20140071769A1 Flash Memory Device and a Method of Verifying the Same Public/Granted day:2014-03-13
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