An RF impedance matching network includes an RF input; an RF output configured to operably couple to a plasma chamber; a series electronically variable capacitor (“series EVC”), the series EVC electrically coupled in series between the RF input and the RF output; and a shunt electronically variable capacitor (“shunt EVC”), the shunt EVC electrically coupled in parallel between a ground and one of the RF input and the RF output; a control circuit to control the series variable capacitance and the shunt variable capacitance, wherein the control circuit is configured to determine the variable plasma impedance of the plasma chamber, determine a series capacitance value and a shunt capacitance value, and generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance; wherein the alteration is caused by at least one of a plurality of switching circuits.