Invention Grant
US09196476B2 Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
有权
半导体装置的制造方法，基板处理装置以及非暂时性计算机可读记录介质
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
- Patent Title (中): 半导体装置的制造方法，基板处理装置以及非暂时性计算机可读记录介质
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Application No.: US14553222Application Date: 2014-11-25
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Publication No.: US09196476B2Publication Date: 2015-11-24
- Inventor: Atsushi Sano , Yoshiro Hirose
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2013-244776 20131127
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; C23C16/34 ; H01L21/228 ; C23C16/30 ; C23C16/455
Abstract:
A thin film having a high resistance to HF and a low dielectric constant is formed with high productivity. A method of manufacturing a semiconductor device, includes performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas containing a predetermined element, carbon and a halogen element and having a chemical bond between the predetermined element and carbon to a substrate; and (b) supplying a reactive gas including a borazine compound to the substrate, wherein the cycle is performed under a condition where a borazine ring structure in the borazine compound and at least a portion of the chemical bond between the predetermined element and carbon in the source gas are preserved to form a thin film including the borazine ring structure and the chemical bond between the predetermined element and carbon on the substrate.
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Information query
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