Invention Grant
- Patent Title: Carrier channel with element concentration gradient distribution and fabrication method thereof
- Patent Title (中): 具有元素浓度梯度分布的载流子通道及其制造方法
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Application No.: US14483169Application Date: 2014-09-11
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Publication No.: US09196483B1Publication Date: 2015-11-24
- Inventor: Ming-Chang Lee , Chih-Kuo Tseng
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW103116982A 20140514
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/02 ; H01L29/36 ; H01L29/10
Abstract:
The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.
Public/Granted literature
- US20150332921A1 CARRIER CHANNEL WITH ELEMENT CONCENTRATION GRADIENT DISTRIBUTION AND FABRICATION METHOD THEREOF Public/Granted day:2015-11-19
Information query
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