Invention Grant
- Patent Title: End-cut first approach for critical dimension control
- Patent Title (中): 关键尺寸控制的终端第一种方法
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Application No.: US14059898Application Date: 2013-10-22
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Publication No.: US09196491B2Publication Date: 2015-11-24
- Inventor: Li-Te S. Lin , Meng Jun Wang , Ya Hui Chang , Hui Ouyang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/3205 ; H01L21/28 ; H01L21/3213
Abstract:
A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.
Public/Granted literature
- US20140106479A1 End-Cut First Approach For Critical Dimension Control Public/Granted day:2014-04-17
Information query
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