Invention Grant
- Patent Title: Semiconductor die singulation methods
- Patent Title (中): 半导体芯片分割方法
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Application No.: US14484843Application Date: 2014-09-12
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Publication No.: US09196511B2Publication Date: 2015-11-24
- Inventor: Gordon M. Grivna , James M. Parsey, Jr.
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/67 ; H01L21/78 ; B28D5/00
Abstract:
In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.
Public/Granted literature
- US20150027290A1 SEMICONDUCTOR DIE SINGULATION METHODS Public/Granted day:2015-01-29
Information query
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