Invention Grant
US09196530B1 Forming self-aligned conductive lines for resistive random access memories
有权
形成用于电阻随机存取存储器的自对准导线
- Patent Title: Forming self-aligned conductive lines for resistive random access memories
- Patent Title (中): 形成用于电阻随机存取存储器的自对准导线
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Application No.: US12782809Application Date: 2010-05-19
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Publication No.: US09196530B1Publication Date: 2015-11-24
- Inventor: Innocenzo Tortorelli , Fabio Pellizzer , Pietro Petruzza
- Applicant: Innocenzo Tortorelli , Fabio Pellizzer , Pietro Petruzza
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768
Abstract:
Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.
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