Invention Grant
- Patent Title: Stacked wafer structure and method for stacking a wafer
- Patent Title (中): 堆叠晶片结构和堆叠晶片的方法
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Application No.: US13845728Application Date: 2013-03-18
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Publication No.: US09196589B2Publication Date: 2015-11-24
- Inventor: Yu-Lin Yen , Hsi-Chien Lin , Yeh-Shih Ho
- Applicant: Xintec Inc.
- Applicant Address: TW Taoyuan
- Assignee: XINTEC INC.
- Current Assignee: XINTEC INC.
- Current Assignee Address: TW Taoyuan
- Agency: Liu & Liu
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/00 ; H01L21/50 ; B81C1/00 ; B81C3/00

Abstract:
A stacked wafer structure includes a substrate; dams provided on the substrate and having protrusions on a surface thereof; and a wafer with recesses provided on the dam. The protrusions on the surface of the dams are wedged into the recesses of the wafer, preventing air chambers from forming between the recesses of the wafer and the dams, so that the wafer is not separated from the dams due to the presence of air chambers during subsequent packaging process. A method for stacking a wafer is also provided.
Public/Granted literature
- US20130285215A1 STACKED WAFER STRUCTURE AND METHOD FOR STACKING A WAFER Public/Granted day:2013-10-31
Information query
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