Invention Grant
- Patent Title: Semiconductor device having power distribution using bond wires
- Patent Title (中): 具有使用接合线的配电的半导体装置
-
Application No.: US14302425Application Date: 2014-06-12
-
Publication No.: US09196598B1Publication Date: 2015-11-24
- Inventor: Shailesh Kumar , Rishi Bhooshan , Vikas Garg , Chetan Verma , Navas Khan Oratti Kalandar
- Applicant: Shailesh Kumar , Rishi Bhooshan , Vikas Garg , Chetan Verma , Navas Khan Oratti Kalandar
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00
Abstract:
A semiconductor device uses insulated bond wires to connect peripheral power supply and ground bond pads on the periphery of the device to array power supply and ground bond pads located on an interior region of a integrated circuit die of the device. Power supply and ground voltages are conveyed from array bond pads using vertical vias down to one or more corresponding inner power distribution layers. The bond wire connections form rows and columns of hops constituting a mesh power grid that reduces the IR drop of the semiconductor device.
Public/Granted literature
- US20150364439A1 SEMICONDUCTOR DEVICE HAVING POWER DISTRIBUTION USING BOND WIRES Public/Granted day:2015-12-17
Information query
IPC分类:
