A method of forming a semiconductor structure includes forming a first plurality of fins in a first region of a semiconductor substrate and a second plurality of fins in a second region of a semiconductor substrate. A gate structure is formed covering a first portion of the first and second plurality of fins. The gate structure does not cover a second portion of the first and second plurality of fins. A first epitaxial layer is grown surrounding the second portion of the first plurality of fins and a second epitaxial layer is grown surrounding the second portion of the second plurality of fins. An ILD layer is deposited and partially etched to expose the first epitaxial layer and a top portion of the second epitaxial layer. A metal layer is deposited around the first epitaxial layer and above the top portion of the second epitaxial layer.