A semiconductor device includes, in a cell region thereof: a low resistance semiconductor layer; a drift layer; a base region; a high-concentration semiconductor region; and a gate electrode layer. The semiconductor device includes, in a peripheral region thereof: the low resistance semiconductor layer; the drift layer; which is formed over the low resistance semiconductor layer; a gate lead line; a gate finger; and a gate pad. The gate electrode layer and the gate lead line are electrically connected with each other by way of a resistor made of polysilicon containing an impurity, and an impurity concentration in polysilicon which forms the resistor is lower than an impurity concentration in polysilicon which forms the gate electrode layer.