Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same

Invention Grant

US09196746B2 Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same 有权

Title translation: 包括主活性层和次活性层的薄膜晶体管及其制造方法

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Patent Title: Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same
Patent Title (中): 包括主活性层和次活性层的薄膜晶体管及其制造方法
Application No.: US13487409

Application Date: 2012-06-04
Publication No.: US09196746B2

Publication Date: 2015-11-24
Inventor: Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
Applicant: Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
Applicant Address: KR
Assignee: SAMSUNG DISPLAY CO., LTD.
Current Assignee: SAMSUNG DISPLAY CO., LTD.
Current Assignee Address: KR
Agency: Cantor Colburn LLP
Priority: KR10-2011-0129148 20111205
Main IPC: H01L29/10
IPC: H01L29/10 ; H01L29/786

Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same

Abstract:

A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Abstract(Chinese):

薄膜晶体管包括在基板上的栅电极，与栅电极电连接并包括暴露的沟道部分的主有源层，与主有源层电连接的源电极，与主有源层电连接的漏电极，源电极并与主有源层电连接，以及与主活性层电连接的子有源层。

Public/Granted literature

US20120286272A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-11-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10	...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的