Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing the same
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US14110794Application Date: 2012-04-02
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Publication No.: US09196803B2Publication Date: 2015-11-24
- Inventor: Takashi Ichihara , Hiroaki Kageyama
- Applicant: Takashi Ichihara , Hiroaki Kageyama
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2011-087077 20110411; JP2011-178041 20110816
- International Application: PCT/JP2012/058966 WO 20120402
- International Announcement: WO2012/141031 WO 20121018
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/56 ; H01L33/44 ; H01L33/60 ; H01L33/46 ; H01L33/20 ; H01L33/38

Abstract:
[Object][Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.
Public/Granted literature
- US20140034992A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-02-06
Information query
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