Invention Grant
- Patent Title: Fabrication method of vertical type semiconductor memory apparatus
- Patent Title (中): 垂直型半导体存储装置的制造方法
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Application No.: US14676422Application Date: 2015-04-01
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Publication No.: US09196832B2Publication Date: 2015-11-24
- Inventor: Dae Ho Rho , Jeong Tae Kim , Hyun Kyu Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0071498 20130621
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L27/24
Abstract:
Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.
Public/Granted literature
- US20150207073A1 SEMICONDUCTOR MEMORY APPARATUS AND FABRICATION METHOD THEREOF Public/Granted day:2015-07-23
Information query
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