Invention Grant
US09196869B2 Manufacturing method of light-emitting device with nano-imprinting wiring
有权
具有纳米压印布线的发光器件的制造方法
- Patent Title: Manufacturing method of light-emitting device with nano-imprinting wiring
- Patent Title (中): 具有纳米压印布线的发光器件的制造方法
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Application No.: US13796703Application Date: 2013-03-12
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Publication No.: US09196869B2Publication Date: 2015-11-24
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-060106 20120316
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/00

Abstract:
Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less.
Public/Granted literature
- US20130240852A1 Light-Emitting Device and Manufacturing Method Thereof Public/Granted day:2013-09-19
Information query
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