Methods and apparatus are disclosed related to a memory device, such as a flash memory device that includes an array of memory cells. One such method includes detecting values of charges stored in selected memory cells in the memory cell array. The method also includes processing the detected values in accordance with a Viterbi algorithm so as to determine data stored in the selected memory cells. In one embodiment, the flash memory cell array includes word lines and bit lines. Detecting the values of charges includes detecting values of charges stored in a selected row of memory cells by selecting one of the word lines. The Viterbi algorithm provides correct data where inter-signal interference between the cells affects the accuracy of read data.